bulk SiO2 has a spectrum with a strong first peak, mostly derived from p-states in the oxygen conduction band. The spectrum from the Si/SiO2 interface is more of a featureless step function due to the reduced number of O-O second neighbors. The edge onset is reduced 3, consistent with the difference in conduction band onsets for Si and SiO2
By: David Muller
Microscope: VG HB 501UX STEM
Energy Resolution: 0.9eV
Reference:“The electronic structure at the atomic scale of ultra-thin gate oxides”, D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann and G. Timp, Nature, 399, 758-761 (1999).
By: David Muller
Microscope: VG HB 501UX STEM
Energy Resolution: 0.9eV
Reference: “The electronic structure at the atomic scale of ultra-thin gate oxides”, D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann and G. Timp, Nature, 399, 758-761 (1999).