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Silicon in Silicon Carbide (SiC)

Si L edge in Silicon carbide (opens larger version)
The Si L edge in SiC shows small excitionic peaks at ~ 104 eV on the side of the main peak that roughly reflects the conduction band in SiC, with its onset at ~103 eV

By: David Muller

Microscope: Delft Monochromated Tecnai F20

Energy Resolution: 0.2eV

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