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Silicon, Si3N4 and SiO2

Si L2,3 Edge in Si, Si3N4 and SiO2 (opens larger version)
The Si L2,3 edge shifts upwards in energy from ~99 eV for c-Si to ~103 ev for Si3N4 to 106 for SiO2. This reflects both an increasing optical gap, and an increased binding energy as the formal valence increase from 0 to 4+. The c-Si can be interpreted qualitatively in terms of its ground state DOS, but the SiO2 spectra is dominated by excitonic peaks at 106, 108 eV.

By: Aycan Yurtsever

Microscope: VG HB 501UX STEM

Energy Resolution: 0.5eV

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